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CHA2066-QAG
RoHS COMPLIANT
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package Description
The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets. The circuit is manufactured with a standard PHEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free SMD package.
CHA2066-QAG ( low current ) 20
Main Features
Gain & NF ( dB )
18 16 14 12 10 8 6 4 2 0 8 9 10 11 12 13 14 Frequency ( GHz ) 15 16 17 18 Gain dB NF
Broadband performance 10-16GHz 2.5dB noise figure, 10-16GHz (BD) 16dB gain, 1.5dB gain flatness Low DC power consumption. 20dBm 3rd order intercept point (BE) 16L-QFN3x3 SMD package (BD & BE refer to biasing conditions)
Main Characteristics
Tamb = +25 C Symbol NF G IP3 Parameter Noise figure, 10-16GHz (BD) Gain 3rd order intercept point (BE) 14 20 Min Typ 2.5 16 21 Max 3.0 Unit dB dB dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. DSCHA2066QAG6332 - 28 Nov 06 1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2066-QAG
Tamb = +25 Vd = +4V C, Symbol Fop G G NF VSWRin VSWRout IP3 P1dB Id Parameter Operating frequency range Gain Gain flatness Noise figure Input VSWR Ouput VSWR (11 to 16 GHz) 3rd order intercept point
10-16GHz Low Noise Amplifier
Electrical Characteristics (BD: Low current biasing)
Min 10 14
Typ
Max 16
Unit Ghz dB
16 1.5 2.5 2.0 :1 1.5:1 2.0 3.0 3.0:1 2.0:1
dB dB
17 9.0
18 10 50 65
dBm dBm mA
Output power at 1dB gain compression Drain bias current
These values are representative of onboard measurements based on the propose characterization board.
Absolute Maximum Ratings (1)
Tamb = +25 C Symbol Vd Pin Rth_BD Rth_BE Top Tstg Parameter (1) Drain bias voltage (2) Maximum input power overdrive Thermal Resistance channel to ground paddle (3) Thermal Resistance channel to ground paddle (3) Operating temperature range Storage temperature range Values 4.5 -3.0 155 195 -40 to +85 -55 to +125 Unit V dBm C/W C/W C C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) For a typical biasing circuit: B & D grounded. See chip biasing option page 9/12. (3) Thermal resistance for Tamb. = +85 and a Tj max = +175 C C.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
2/12
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
10-16GHz Low Noise Amplifier
Tamb = +25 Vd = +4V C, Symbol Fop G G NF VSWRin VSWRout IP3 P1dB Id Parameter Operating frequency range Gain Gain flatness Noise figure Input VSWR Ouput VSWR (11 to 16 GHz) 3rd order intercept point Output power at 1dB gain compression Drain bias current 20 13 Min 10 14
CHA2066-QAG
Electrical Characteristics (BE: High current biasing)
Typ
Max 16
Unit Ghz dB
16 1.5 3.0 2.0 :1 1.5:1 21 14 70 80 2.0 3.5 3.0:1 2.0:1
dB dB
dBm dBm mA
These values are representative of onboard measurements based on the propose characterization board.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
3/12
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2066-QAG
10-16GHz Low Noise Amplifier
Typical PCB Measured Performance
BD: Low Noise & Low Consumption (T amb. 25 B & D grounded) C; Tamb = +25 Vd = +4V C,
CHA2066-QAG ( Low current ) 20 16 12 8 4 Sij ( dB ) 0 -4 -8 -12 -16 -20 -24 -28 6 8 10 12 14 Frequency ( GHz ) 16 18 20 22 dBS11 dBS12 dBS21 dBS22
Sij in the package access plans, using the proposed land patern & board.
CHA2066-QAG ( low current ) 20 18 16 14 Gain & NF ( dB ) 12 10 8 6 4 2 0 8 9 10 11 12 13 14 15 16 17 18 Frequency ( GHz ) Gain dB NF
Gain & NF in the package, using the proposed land patern & board.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
4/12
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
10-16GHz Low Noise Amplifier
Typical Package Sij parametres
CHA2066-QAG
BD: Low Noise & Low Consumption (T amb. 25 B & D grounded) C; Tamb = +25 Vd = +4V C,
Freq (GHz) 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 26.00 27.00 28.00 29.00 30.00
dBS11 -0.07 -0.45 -0.88 -1.40 -2.92 -5.26 -8.21 -9.01 -8.96 -10.57 -14.43 -20.81 -16.28 -12.25 -10.79 -10.41 -8.49 -7.23 -5.15 -3.83 -3.66 -4.12 -5.14 -6.57 -7.93 -7.57 -5.73 -3.48 -2.24 -1.67
PS11 -32.81 -65.34 -98.76 -137.64 174.92 114.65 49.08 -4.96 -53.79 -99.92 -148.00 138.33 73.75 24.06 -4.78 -17.87 -27.44 -40.10 -61.69 -87.40 -115.49 -138.34 -158.51 -170.13 -173.76 -165.83 -166.05 -172.97 176.23 166.40
dBS12 -63.73 -65.72 -55.17 -53.89 -50.86 -53.58 -53.95 -42.49 -38.52 -35.09 -32.70 -30.58 -31.37 -31.27 -31.18 -30.83 -31.91 -31.20 -29.59 -27.70 -27.45 -28.22 -27.99 -28.22 -28.81 -29.57 -31.13 -31.61 -33.44 -34.06
PS12 155.32 131.09 81.01 101.44 67.72 27.26 102.90 83.25 49.24 21.84 -13.00 -49.54 -83.26 -109.01 -131.65 -156.53 173.64 172.53 153.69 125.70 94.93 69.02 46.60 26.29 2.91 -22.04 -34.87 -56.30 -68.53 -82.14
dBS21 -45.04 -43.50 -28.86 -9.03 2.29 10.78 15.10 16.93 17.85 18.37 18.28 17.51 17.24 16.52 15.85 15.61 15.52 14.85 13.57 11.65 9.04 6.26 3.63 0.88 -2.22 -6.10 -10.73 -15.64 -20.49 -24.09
PS21 -130.29 173.73 -84.51 -127.43 170.98 97.39 22.29 -42.88 -99.72 -151.89 158.56 113.02 73.36 33.07 -4.32 -40.93 -80.78 -123.20 -166.84 150.73 111.11 76.39 43.54 10.62 -22.25 -54.04 -78.74 -97.73 -104.47 -106.27
dBS22 0.22 0.11 -0.49 -1.62 -1.91 -3.20 -4.84 -6.12 -7.71 -9.47 -12.71 -15.50 -20.34 -22.16 -29.27 -24.00 -15.41 -10.41 -7.13 -5.57 -4.87 -4.61 -4.03 -3.53 -2.63 -2.08 -1.64 -1.05 -0.77 -0.27
PS22 -22.46 -46.01 -70.41 -88.42 -109.44 -134.57 -151.54 -173.88 158.77 121.42 72.56 19.69 -5.61 -29.50 -48.96 71.70 45.23 28.78 2.09 -28.15 -54.30 -75.71 -94.54 -111.54 -126.44 -141.15 -154.74 -166.34 -176.68 173.66
Refere to the "definition of the Sij reference plans" section below.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
5/12
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2066-QAG
10-16GHz Low Noise Amplifier
Typical PCB Measured Performance
BE: Low Noise & High Consumption (T amb. 25 B & E grounded) C; Tamb = +25 Vd = +4V C,
CHA2066-QAG ( High current ) 20 16 12 8 4 Sij ( dB ) 0 -4 -8 -12 -16 -20 -24 -28 6 8 10 12 14 Frequency ( GHz ) 16 18 20 22 dBS11 dBS12 dBS21 dBS22
Sij in the package access plans, using the proposed land patern & board.
CHA2066-QAG ( Low & high current ) 24 22 20 18 P -1dB & OIP3 ( dBm ) 16 14 12 10 8 6 4 2 0 7 8 9 10 11 12 13 14 15 16 17 18 Frequency ( GHz ) Pout -1dB BD OIP3 BD Pout -1dB BE OIP3 BE
Pout -1dB & OIP3 in the package, using the proposed land patern & board.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
6/12
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
10-16GHz Low Noise Amplifier
Typical Package Sij parametres
CHA2066-QAG
BE: Low Noise & High Consumption (T amb. 25 B & E grounded) C; Tamb = +25 Vd = +4V C,
Freq 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 26.00 27.00 28.00 29.00 30.00
dBS11 -0.06 -0.44 -0.87 -1.38 -2.91 -5.25 -8.24 -9.04 -8.81 -10.18 -13.62 -19.18 -15.38 -11.68 -10.38 -10.21 -8.57 -7.68 -5.40 -3.86 -3.60 -4.13 -5.13 -6.56 -7.89 -7.56 -5.73 -3.52 -2.28 -1.74
PS11 -32.83 -65.39 -98.89 -137.90 174.61 114.52 49.38 -4.12 -53.24 -100.30 -149.42 138.59 75.97 24.19 -7.42 -21.88 -33.43 -43.47 -62.60 -87.55 -115.42 -138.36 -158.10 -169.57 -172.95 -165.38 -165.65 -172.96 176.11 165.52
dBS12 -63.05 -65.94 -55.38 -54.31 -50.63 -52.37 -52.51 -42.99 -38.92 -35.31 -32.83 -30.61 -31.34 -31.15 -30.90 -30.60 -32.22 -31.34 -29.57 -27.49 -26.98 -27.93 -27.69 -27.90 -28.39 -29.21 -30.78 -31.33 -33.18 -33.95
PS12 154.13 130.29 78.54 104.66 69.94 30.30 86.03 80.40 48.79 22.90 -11.96 -48.80 -82.22 -108.12 -131.51 -157.78 174.12 173.10 155.96 127.88 96.14 70.63 46.58 26.86 2.79 -22.16 -35.27 -57.32 -69.14 -83.12
dBS21 -43.95 -43.95 -27.08 -8.50 2.61 11.16 15.55 17.42 18.37 18.91 18.84 18.07 17.78 17.02 16.30 16.13 16.05 15.52 14.35 12.46 9.77 6.91 4.26 1.48 -1.62 -5.55 -10.18 -15.13 -20.05 -23.73
PS21 -133.71 170.25 -76.01 -128.93 170.88 98.22 23.53 -41.65 -98.51 -150.77 159.62 113.90 74.36 34.08 -2.99 -38.98 -78.76 -120.87 -165.06 151.53 111.34 76.47 43.61 10.62 -22.36 -54.31 -79.17 -98.50 -105.53 -107.10
dBS22 0.25 0.13 -0.53 -1.50 -1.70 -2.87 -4.42 -5.62 -7.13 -8.61 -11.31 -13.46 -17.32 -18.79 -23.23 -31.30 -17.77 -11.24 -7.34 -5.55 -4.86 -4.66 -4.09 -3.57 -2.65 -2.10 -1.65 -1.05 -0.78 -0.28
PS22 -22.35 -46.01 -70.57 -87.59 -109.15 -134.71 -152.27 -176.16 155.31 116.72 67.54 17.22 -11.39 -38.57 -70.09 81.59 47.88 33.04 5.05 -27.38 -54.73 -76.49 -95.03 -111.80 -126.37 -141.05 -154.66 -166.34 -176.83 173.49
Refere to the "definition of the Sij reference plans" section below.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
7/12
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2066-QAG
Package outline:
10-16GHz Low Noise Amplifier
Matt tin, Lead Free Units From the standard
(Green) mm JEDEC MO-220 17- GND
1- NC 2- GND 3- RF in 4- GND 5- NC 6- B 7- D 8- E
9- GND 10- RF out 11- GND 12- NC 13- NC 14- Vd 15- Vg2 16- Vg1
Ref. : DSCHA2066QAG6332 - 28 Nov 06
8/12
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
10-16GHz Low Noise Amplifier
Definition of the Sij reference plans
CHA2066-QAG
The reference plans are defined from the footprint of the recommended characterization board shown below under the number 95542. The reference is the symmetrical axis of the package. The input is and output reference plans are located at 2.65mm offset (input wise and output wise respec.) from this axis. Then, the given Sij incorporates this land patern.
2.65
2.65
Circuit Biasing options
This circuit is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way.
- The two requirements are: N Not exceed Vds = 3.5Volt 1: (internal Drain to S ource voltage). N Not biased in such a way that Vgs becomes posi tive. (Internal Gate to Source voltage) 2: - We propose two standard biasing: Low Noise and low consumption BD: Low Noise and high output power BE:
Vd = 4V, B and D grounded, and E not connected. Idd = 50mA & Pout-1dB = +10dBm Typical. Vd = 4V, B and E grounded. Idd = 70mA & Pout-1dB = +14dBm Typical.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
9/12
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2066-QAG
10-16GHz Low Noise Amplifier
Application note
The design of the motherboard has a strong impact on the over all performance since the transition from the motherboard to the package is comparably large. In case of the SMD type packages of United Monolithic Semiconductors the motherboard should be designed according to the information given in the following to achieve good performance. Other configurations are also possible but can lead to different results. If you need advise please contact United Monolithic Semiconductors for further information.
SMD type packages of UMS should allow design and fabrication of micro- and mm-wave modules at low cost. Therefore, a suitable motherboard environment has been chosen. All tests and verifications have been performed on Rogers RO4003. This material exhibits a permittivity of 3.38 and has been used with a thickness of 200m [8 mils] and a 1/2oz or less copper cladding. The corresponding 50Ohm transmission line has a strip width of about 460m [approx. 18 mils].
The contact areas on the motherboard for the package connections should be designed according to the footprint given below. The proper via structure under the ground pad is very important in order to achieve a good RF and lifetime performance. All tests have been done by using a grid of plated through vias with a diameter of less than 300m [12 mils] and a spacing of less than 700m [28 mils] from the centres of two adjacent vias. The via grid should cover the whole space under the ground pad and the vias closest to the RF ports should be located near the edge of the pad to allow a good RF ground connection. Since the vias are important for heat transfer, a proper via filling should be guaranteed during the mounting procedure to get a low thermal resistance between package and heat sink. For power devices the use of heat slugs in the motherboard instead of a grid of via's is recommended.
For the mounting process the SMD type package can be handled as a standard surface mount component. The use of either solder or conductive epoxy is possible. The solder thickness after reflow should be typical 50m [2 mils] and the lateral alignment between the package and the motherboard should be within 50m [2 mils]. Caution should be taken to obtain a good and reliable contact over the whole pad areas. Voids or other improper connections, in particular, between the ground pads of motherboard and package will lead to a deterioration of the RF performance and the heat dissipation. The latter effect can reduce drastically reliability and lifetime of the product.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
10/12
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
10-16GHz Low Noise Amplifier
CHA2066-QAG
(For production, design must be adapted with regard to PCB tolerances and assembly process) Basic footprint for a 16L-QFN3x3 (all unit mm) (Please, refer to the UMS proposed footprint for optimum operation in the following "Proposed Assembly board" section)
The RF ports are DC blocked on chip. The DC connection (Vd) does not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling on the PC board, as close as possible to the package.
SMD mounting procedure
The SMD leadless package has been designed for high volume surface mount PCB assembly process. The dimensions and footprint required for the PCB (motherboard) are given in the drawings above. For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
11/12
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA2066-QAG
Proposed Assembly characterization.
-
10-16GHz Low Noise Amplifier
board for the 16L-QFN3x3 products
-
Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a microstrip to coplanar transition to access the package. Recommended for the implementation of this product on a module board.
Ordering Information
QFN 3x3 RoHS compliant package: CHA2066-QAG/XY Stick: XY = 20 Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA2066QAG6332 - 28 Nov 06 12/12 Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

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